DocumentCode
3397938
Title
Numerical analysis and optimization of double avalanche region IMPATT diode
Author
Zemliak, Alexander M ; Cabrera, S.
Author_Institution
Puebla Autonomous Univ., Puebla
fYear
2008
fDate
8-12 Sept. 2008
Firstpage
139
Lastpage
140
Abstract
The analysis and optimization of the avalanche diode structure that includes two avalanche regions have been realized on basis of the nonlinear model and special optimization procedure. The admittance and energy characteristics of this type of diode were analyzed in very wide frequency band. Output power level was optimized for the second frequency band near the 220 GHz.
Keywords
IMPATT diodes; millimetre wave diodes; admittance; double avalanche region IMPATT diode; energy characteristics; nonlinear model; Admittance; Diodes; Doping profiles; Helium; IEEE catalog; Indium tin oxide; Microwave technology; Numerical analysis; Organizing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
978-966-335-166-7
Electronic_ISBN
978-966-335-169-8
Type
conf
DOI
10.1109/CRMICO.2008.4676322
Filename
4676322
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