Title :
Numerical analysis and optimization of double avalanche region IMPATT diode
Author :
Zemliak, Alexander M ; Cabrera, S.
Author_Institution :
Puebla Autonomous Univ., Puebla
Abstract :
The analysis and optimization of the avalanche diode structure that includes two avalanche regions have been realized on basis of the nonlinear model and special optimization procedure. The admittance and energy characteristics of this type of diode were analyzed in very wide frequency band. Output power level was optimized for the second frequency band near the 220 GHz.
Keywords :
IMPATT diodes; millimetre wave diodes; admittance; double avalanche region IMPATT diode; energy characteristics; nonlinear model; Admittance; Diodes; Doping profiles; Helium; IEEE catalog; Indium tin oxide; Microwave technology; Numerical analysis; Organizing;
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
DOI :
10.1109/CRMICO.2008.4676322
