• DocumentCode
    3397943
  • Title

    Graded band gap diodes with static domain

  • Author

    Storozhenko, I.P. ; Prokhorov, E.D. ; Botsula, O.V. ; Arkusha, Yu V.

  • Author_Institution
    V. N. Karazin Kharkov Nat. Univ., Kharkov
  • fYear
    2008
  • fDate
    8-12 Sept. 2008
  • Firstpage
    141
  • Lastpage
    142
  • Abstract
    A double-temperature model of inter-valley electron transfer (IET) is used to study the avalanche effect in graded band gap Alx(z)Ga1-x(z)As diodes with IET. It is demonstrated that the graded band gap crystals enable decrease voltage of avalanche effect in static domain. This effect is useful in noise diodes with static domain and IMPATT diodes.
  • Keywords
    III-V semiconductors; aluminium compounds; avalanche diodes; energy gap; gallium arsenide; semiconductor diodes; AlGaAs; IMPATT diodes; graded band gap crystals; graded band gap diodes; inter-valley electron transfer; noise diodes; Diodes; Gallium arsenide; Helium; Photonic band gap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-966-335-166-7
  • Electronic_ISBN
    978-966-335-169-8
  • Type

    conf

  • DOI
    10.1109/CRMICO.2008.4676323
  • Filename
    4676323
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3397943