Title :
Breakdown mechanism in pulse-charged spark gap based on photoconductive switches
Author :
Xu, Ming ; Shi, Wei ; Wu, Shenjiang ; Ji, WeiLi ; Zhang, Lin ; Chen, SuGuo
Author_Institution :
Appl. Phys. Dept., Xi´´an Univ. of Technol., Xi´´an, China
Abstract :
This paper reports the experimental results of pulse-charged spark gap based on GaAs semiconductor photoconductive switches. With variation in the position and structure of spark gap, the electric characteristics of output waveforms are obtained and the breakdown mechanism in pulse-charged spark gap based on photoconductive switches is analyzed. Results imply that high current or ultrafast pulse could be switched by those assembled switches.
Keywords :
gallium arsenide; photoconducting switches; pulsed power switches; semiconductor device breakdown; spark gaps; GaAs; breakdown mechanism; electric characteristics; output waveform; pulse-charged spark gap; semiconductor photoconductive switches; Dielectric materials; Electric breakdown; Gallium arsenide; Microstrip; Photoconducting devices; Photoconductivity; Sparks; Substrates; Switches; Voltage; GaAs photoconductive switches; spark gap; ultrafast pulse;
Conference_Titel :
Properties and Applications of Dielectric Materials, 2009. ICPADM 2009. IEEE 9th International Conference on the
Conference_Location :
Harbin
Print_ISBN :
978-1-4244-4367-3
Electronic_ISBN :
978-1-4244-4368-0
DOI :
10.1109/ICPADM.2009.5252360
