Title :
A 25–28Gbps clock and data recovery system with embedded equalization in 65-nm CMOS
Author :
Li Sun ; Pan, Andrew ; Keh Chung Wang ; Yue, C. Patrick
Author_Institution :
High-Speed Silicon Lab., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
A novel CDR system with a built-in equalizer for compensating electrical/optical channel loss is presented. A variable-gain delay line is implemented to perform both data delay and equalization simultaneously without consuming extra power. Designed in a 65-nm 1P9M general-purpose CMOS process, the proposed CDR system employs current-mode logic circuits extensively with shunt peaking inductive load to attain the required gain at high speed. To minimize the area occupied by the spiral inductors, custom stacked inductors, achieving an inductance density of 0.3pH/um2, are used. The prototype IC occupies less than 0.9mm2. Post-layout simulation results show that the CDR is able to recover a 28-Gbps NRZ PRBS data after transmission through a channel with 10-dB loss at 14 GHz when the equalization function is activated. The CDR consumes 100mA from a 1-V supply.
Keywords :
CMOS integrated circuits; clock and data recovery circuits; current-mode logic; delay lines; equalisers; logic circuits; 1P9M general-purpose CMOS process; CDR system; NRZ PRBS data; bit rate 25 Gbit/s to 28 Gbit/s; built-in equalizer; clock and data recovery system; current 100 mA; current-mode logic circuits; custom stacked inductors; data delay; electrical-optical channel loss equalization; embedded equalization function; frequency 14 GHz; inductance density; loss 10 dB; post-layout simulation; prototype IC; shunt peaking inductive load; size 65 nm; spiral inductors; variable-gain delay line; voltage 1 V; Clocks; Delay; Detectors; Equalizers; Inductors; Mixers; Topology;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6466668