Title :
The influence of barrier height on the current sensitivity of a microwave Schottky detector
Author :
Shnitnikov, A.S. ; Gudkova, N.B.
Author_Institution :
Moscow Power Eng. Inst., Tech. Univ., Moscow
Abstract :
The properties of silicon Schottky diodes are studied using a one-dimensional physical-topological model. Diode current-voltage characteristics and detector current versus dissipated power are computed. The influence of the diode barrier height on the low-power current sensitivity is investigated.
Keywords :
Schottky diodes; microwave diodes; barrier height; current sensitivity; diode current-voltage characteristics; microwave Schottky detector; silicon Schottky diodes; Current-voltage characteristics; Detectors; Power engineering; Schottky diodes; Silicon;
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
DOI :
10.1109/CRMICO.2008.4676327
