DocumentCode :
3398130
Title :
Effects of V/III Ratios on the Shape and Optical Properties of InP Nanowires Grown on Si Substrates
Author :
Moewe, Michael ; Chuang, Linus C. ; Crankshaw, Shanna ; Chase, Chris ; Chang-Hasnain, Connie
Author_Institution :
Univ. of California at Berkeley, Berkeley
fYear :
2007
fDate :
July 29 2007-Aug. 11 2007
Firstpage :
104
Lastpage :
105
Abstract :
We report the effect of varying the MOCVD gas precursor V/lll ratios on the structural and optical properties of InP nanowires grown on (111)Si susbstrates. We show record narrow photoluminescence linewidths for optimal ratios.
Keywords :
III-V semiconductors; indium compounds; nanowires; photoluminescence; spectral line breadth; InP; Si; V/lll ratios; nanowires; optical properties; photoluminescence linewidths; structural properties; Gold; Indium phosphide; MOCVD; Nanowires; Optical computing; Optical recording; Photoluminescence; Potential well; Shape; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
Type :
conf
DOI :
10.1109/INOW.2007.4302896
Filename :
4302896
Link To Document :
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