Title :
Nitrided GdTiO as charge-trapping layer for flash memory applications
Author :
Qing-Bo Tao ; Lai, P.T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Based on capacitor with the structure of Al/Al2O3/GdTiO (N)/SiO2/Si, the charge-trapping properties of GdTiO and GdTiON films were investigated. Compared to the memory device with GdTiO film as charge-trapping layer, the one with GdTiON showed higher program/erase speed, larger memory window, and better retention characteristic due to additional charge traps with desirable energy level created by nitrogen incorporation in the film.
Keywords :
MIS capacitors; aluminium compounds; electron traps; flash memories; gadolinium compounds; nitridation; silicon compounds; titanium compounds; Al-Al2O3-GdTiON-SiO2-Si; MONOS capacitor; charge trapping layer; erase speed; flash memory; memory window; program speed; retention characteristic; Aluminum oxide; Capacitance-voltage characteristics; Capacitors; Films; High K dielectric materials; Hysteresis; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6466677
