• DocumentCode
    3398178
  • Title

    Nitrided GdTiO as charge-trapping layer for flash memory applications

  • Author

    Qing-Bo Tao ; Lai, P.T.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
  • fYear
    2012
  • fDate
    Oct. 29 2012-Nov. 1 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Based on capacitor with the structure of Al/Al2O3/GdTiO (N)/SiO2/Si, the charge-trapping properties of GdTiO and GdTiON films were investigated. Compared to the memory device with GdTiO film as charge-trapping layer, the one with GdTiON showed higher program/erase speed, larger memory window, and better retention characteristic due to additional charge traps with desirable energy level created by nitrogen incorporation in the film.
  • Keywords
    MIS capacitors; aluminium compounds; electron traps; flash memories; gadolinium compounds; nitridation; silicon compounds; titanium compounds; Al-Al2O3-GdTiON-SiO2-Si; MONOS capacitor; charge trapping layer; erase speed; flash memory; memory window; program speed; retention characteristic; Aluminum oxide; Capacitance-voltage characteristics; Capacitors; Films; High K dielectric materials; Hysteresis; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4673-2474-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2012.6466677
  • Filename
    6466677
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3398178