DocumentCode
3398186
Title
Epitaxial III-V Nanowires on Lattice-Mismatched Substrates by MOCVD
Author
Chuang, Linus C. ; Moewe, Michael ; Crankshaw, Shanna ; Chase, Chris ; Chang-Hasnain, Connie
Author_Institution
Univ. of California, Berkeley
fYear
2007
fDate
July 29 2007-Aug. 11 2007
Firstpage
94
Lastpage
95
Abstract
We experimentally determined critical diameters (CDs) of epitaxial nanowires (NWs) grown on lattice-mismatched substrates by MOCVD. The CD was found to be inversely dependent on lattice mismatch. For InP NWs on Si, quantization effect and narrow linewidth were observed for the micro-photoluminescence (mu-PL) measurement.
Keywords
III-V semiconductors; MOCVD; indium compounds; nanotechnology; nanowires; photoluminescence; semiconductor growth; InAs; MOCVD; critical diameters; epitaxial lll-V nanowires; lattice-mismatched substrates; microphotoluminescence; quantization effect; Capacitive sensors; Electrons; Gold; III-V semiconductor materials; Indium phosphide; Lattices; MOCVD; Nanowires; Quantization; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location
Beijing
Print_ISBN
978-1-4244-1591-5
Type
conf
DOI
10.1109/INOW.2007.4302899
Filename
4302899
Link To Document