Title :
Microstructure Evolution in Metal-organic Vapor Phase Epitaxy-Grown GaN with Different Low-Temperature Buffer Layer Annealing Time
Author :
Li, Hongtao ; Luo, Yi ; Wang, Lai ; Xi, Guangyi ; Jiang, Yang ; Zhao, Wei ; Han, Yanjun
Author_Institution :
Tsinghua Univ., Beijing
fDate :
July 29 2007-Aug. 11 2007
Abstract :
Microstructure evolution in MOVPE-grown GaN with different low-temperature-buffer annealing time was investigated. Low-temperature-buffer annealing process was found to effectively modulate the in-plane and out-of-plane misorientation of mosaic blocks, and simultaneously diminish the in-plane crystallite size.
Keywords :
III-V semiconductors; MOCVD; annealing; crystallites; gallium compounds; mosaic structure; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; GaN; MOVPE; in-plane crystallite size; in-plane misorientation; low-temperature buffer layer annealing time; metal-organic vapor phase epitaxial growth; microstructure evolution; mosaic blocks; out-of-plane misorientation; Annealing; Atomic force microscopy; Buffer layers; Crystallization; Gallium nitride; Hall effect; Laboratories; Microstructure; Optical microscopy; Substrates;
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
DOI :
10.1109/INOW.2007.4302904
