DocumentCode
3398287
Title
Microstructure Evolution in Metal-organic Vapor Phase Epitaxy-Grown GaN with Different Low-Temperature Buffer Layer Annealing Time
Author
Li, Hongtao ; Luo, Yi ; Wang, Lai ; Xi, Guangyi ; Jiang, Yang ; Zhao, Wei ; Han, Yanjun
Author_Institution
Tsinghua Univ., Beijing
fYear
2007
fDate
July 29 2007-Aug. 11 2007
Firstpage
106
Lastpage
107
Abstract
Microstructure evolution in MOVPE-grown GaN with different low-temperature-buffer annealing time was investigated. Low-temperature-buffer annealing process was found to effectively modulate the in-plane and out-of-plane misorientation of mosaic blocks, and simultaneously diminish the in-plane crystallite size.
Keywords
III-V semiconductors; MOCVD; annealing; crystallites; gallium compounds; mosaic structure; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; GaN; MOVPE; in-plane crystallite size; in-plane misorientation; low-temperature buffer layer annealing time; metal-organic vapor phase epitaxial growth; microstructure evolution; mosaic blocks; out-of-plane misorientation; Annealing; Atomic force microscopy; Buffer layers; Crystallization; Gallium nitride; Hall effect; Laboratories; Microstructure; Optical microscopy; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location
Beijing
Print_ISBN
978-1-4244-1591-5
Type
conf
DOI
10.1109/INOW.2007.4302904
Filename
4302904
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