DocumentCode
3398400
Title
Annealing effect on spectral linewidth of hexagonal gallium nitride quantum dots
Author
Kawano, Takeshi ; Kako, Satoshi ; Kindel, Christian ; Arakawa, Yasuhiko
fYear
2007
fDate
July 29 2007-Aug. 11 2007
Firstpage
120
Lastpage
121
Abstract
We report microphotoluminescence studies of single GaN/AIN QDs. By annealing, an average of spectral linewidth of GaN QDs became narrower from 13.5 to 8.8 [meV]. This suggests that the defects in the vicinity of GaN QDs can be reduced by reconstruntion.
Keywords
III-V semiconductors; aluminium compounds; annealing; gallium compounds; photoluminescence; semiconductor quantum dots; wide band gap semiconductors; GaN-AlN; annealing; defects; hexagonal gallium nitride quantum dots; microphotoluminescence; spectral linewidth; Annealing; Etching; Gallium nitride; III-V semiconductor materials; Laser excitation; Phonons; Quantum dot lasers; Quantum dots; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location
Beijing
Print_ISBN
978-1-4244-1591-5
Type
conf
DOI
10.1109/INOW.2007.4302911
Filename
4302911
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