• DocumentCode
    3398405
  • Title

    A Phase Detector design with wide input range of high frequency for GaAs HBT

  • Author

    Ying Liu ; Yu-Ming Zhang ; Hong-Liang Lu ; Yi-Men Zhang ; Jin-Can Zhang

  • Author_Institution
    Key Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´an, China
  • fYear
    2012
  • fDate
    Oct. 29 2012-Nov. 1 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A wide input range of high frequency Phase Detector(PD) is designed based on WIN Foundry 1μm GaAs HBT technology. The Gilbert Cell topology, the core of the PD, is used in PD design which can be operated from 500MHz to 20GHz with supply voltage of 7 V. The output voltage range in the wide frequency range is higher than 1V with phase changes from -180o to 180o, even reaches 2.5V at 10GHz.
  • Keywords
    III-V semiconductors; UHF transistors; gallium arsenide; heterojunction bipolar transistors; microwave transistors; phase detectors; GaAs; Gilbert cell topology; WIN Foundry GaAs HBT technology; frequency 500 MHz to 20 GHz; high frequency phase detector; size 1 mum; voltage 7 V; wide input range; Detectors; Gallium arsenide; Heterojunction bipolar transistors; Microwave circuits; Phase frequency detector; Phase locked loops;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4673-2474-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2012.6466689
  • Filename
    6466689
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3398405