DocumentCode :
3398567
Title :
Charge injection cancellation in sample-data-comparators using programmable staggering of zeroing signals
Author :
Mayes, Michael K. ; Chen, Ray R.
Author_Institution :
National Semiconductor Corp., Santa Clara, CA, USA
fYear :
1991
fDate :
14-17 May 1991
Firstpage :
719
Abstract :
Comparator offsets resulting from charge injection of MOS switches vary over temperature, supply voltage, and process. These variations lead to difficulties in achieving optimum offset voltages. In a three-stage comparator design with current programmable delay times between autozero signals, optimum offset voltages are achieved over a wide range of operating conditions. By forcing a constant voltage swing on the feedback switches, channel charge injection dependence on effective threshold voltage levels leads to uncompensated offset errors
Keywords :
MOS integrated circuits; analogue processing circuits; comparators (circuits); delays; feedback; sampled data systems; semiconductor switches; MOS switches; autozero signals; channel charge injection; charge injection cancellation; constant voltage swing; current programmable delay times; feedback switches; operating conditions; optimum offset voltages; programmable staggering; sample-data-comparators; three-stage comparator design; threshold voltage levels; uncompensated offset errors; zeroing signals; Clocks; Delay; Feeds; MOS capacitors; Operational amplifiers; Parasitic capacitance; Switches; Temperature; Virtual manufacturing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1991., Proceedings of the 34th Midwest Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-0620-1
Type :
conf
DOI :
10.1109/MWSCAS.1991.252011
Filename :
252011
Link To Document :
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