Title :
Phosphor-free White-light Light-emitting Diodes Based on Prestrained InGaN/GaN Quantum Wells
Author :
Lu, Chih-Feng ; Huang, Chi-Feng ; Yeh, Dong-Ming ; Chen, Yung-Sheng ; Shiao, Wen-Yu ; Yang, C.C.
Author_Institution :
Nat. Taiwan Univ., Taipei
fDate :
July 29 2007-Aug. 11 2007
Abstract :
A prestrained MOCVD growth technique is introduced to enhance the indium incorporation of InGaN/GaN quantum wells for effectively emitting yellow-red light such that white-light light-emitting diodes can be fabricated without using phosphors.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; MOCVD growth technique; indium incorporation; phosphor-free white-light light-emitting diodes; quantum wells; yellow-red light; Capacitive sensors; Electronic mail; Gallium nitride; Indium; Light emitting diodes; MOCVD; Phosphors; Photonic band gap; Stark effect; X-ray scattering;
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
DOI :
10.1109/INOW.2007.4302928
