Title :
Extraction of channel doping profile in DMOS transistors
Author :
Pieracci, A. ; Lanzoni, M. ; Galbiati, P. ; Manzini, S. ; Contiero, C. ; Ricco, B.
Author_Institution :
DEIS, Bologna Univ., Italy
Abstract :
This paper presents the first method to characterize the doping profile and the length of the channel of double-diffused MOS transistors, typically used in smart power ICs. The method, based on capacitance measurements, is validated by means of 2D numerical simulation and applied to transistors fabricated with advanced 0.6 /spl mu/m technology.
Keywords :
capacitance measurement; doping profiles; power MOSFET; semiconductor device models; semiconductor doping; 0.6 mum; 2D numerical simulation; DMOS transistors; capacitance measurements; channel doping profile extraction; channel length; double-diffused MOS transistors; epitaxial section; smart power ICs; Capacitance measurement; Doping profiles; MOSFETs; Medium voltage; Microelectronics; Numerical simulation; Power integrated circuits; Threshold voltage; Transistors; Wire;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553842
