DocumentCode
3398785
Title
Time-Resolved Luminescence of Epitaxial InP Nanowires on (111)Si
Author
Crankshaw, Shanna ; Reitzenstein, Stephan ; Chuang, Linus C. ; Moewe, Michael ; Münch, Steffen ; Hofmann, Carolin ; Forchel, Alfred ; Chang-Hasnain, Connie
Author_Institution
Univ. of California at Berkeley, Berkeley
fYear
2007
fDate
July 29 2007-Aug. 11 2007
Firstpage
162
Lastpage
163
Abstract
We observe a biexponential photoluminescence decay process of as-grown InP nanowires on a (111) silicon substrate. The decay characteristics can be explained through the effects of surface states.
Keywords
III-V semiconductors; indium compounds; nanowires; photoluminescence; surface states; time resolved spectra; InP; Si; biexponential photoluminescence decay process; nanowires; silicon substrate; surface states; time-resolved luminescence; Energy measurement; Indium phosphide; Luminescence; Nanowires; Performance evaluation; Photoluminescence; Radiative recombination; Silicon; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location
Beijing
Print_ISBN
978-1-4244-1591-5
Type
conf
DOI
10.1109/INOW.2007.4302932
Filename
4302932
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