Title :
High voltage low side and high side power devices based on VLD technique
Author :
Mou-fu Kong ; Xing-bi Chen
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Based on PN junction isolation and VLD techniques, high voltage low side and high side power LDMOS transistors are presented. The solution is compatible with CMOS process and BiCMOS process, and the devices are analyzed and confirmed by simulation.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; p-n junctions; power MOSFET; BiCMOS process; PN junction isolation; VLD technique; high voltage high side power devices; high voltage low side power devices; power LDMOS transistors; Breakdown voltage; Doping; Integrated circuits; Junctions; Simulation; Transistors; Voltage control; Junction isolation; LDMOS; Power devices; VLD;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6466709
