Title :
Surface Plasmon Coupling with an InGaN/GaN Quantum Well for Enhancing Light Emission Efficiency
Author :
Lu, Yen-Cheng ; Chen, Cheng-Yen ; Yeh, Dong-Ming ; Shen, Kun-Ching ; Huang, Chi-Feng ; Yang, C.C.
Author_Institution :
Nat. Taiwan Univ., Taipei
fDate :
July 29 2007-Aug. 11 2007
Abstract :
After several fundamental phenomena of surface plasmon coupling with an InGaN/GaN quantum well for light emission enhancement are studied, we evaluate the application of such a coupling process to a light-emitting diode with experimental supports.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; surface plasmons; InGaN-GaN; light emission efficiency; light-emitting diode; quantum well; surface plasmon coupling; Frequency conversion; Gallium nitride; Light emitting diodes; Optical coupling; Photoluminescence; Plasmons; Radiative recombination; Stark effect; Temperature dependence; Temperature distribution;
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
DOI :
10.1109/INOW.2007.4302933
