Title :
230 V SOI PLDMOS with gate field plate for PDP scan IC
Author :
Yong Huang ; Ming Qiao ; Zhen Sun ; Tao Liang ; Bo Zhang
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
We investigated the impact of field plate of PLDMOS in thick film SOI with due consideration to gate field which is connected to gate electrode. SOI PLDMOS is employed in the level shifters and multi-output stage in scan driver for PDP. We have simulated the current capability, the saturate current of gate field plate(GFP) structure has obtained about 30% larger than source field plate(SFP), and has better thermal effects. GFP structure in our fabricated IC is experimentally realized with the device width of 1200μm, the current drivability can reach 400mA in output stage.
Keywords :
MOS integrated circuits; MOSFET; plasma displays; silicon-on-insulator; thick films; GFP structure; PDP scan IC; SFP; SOI PLDMOS; current 400 mA; gate electrode; gate field plate; level shifter; saturate current; size 1200 mum; source field plate; thermal effect; thick film SOI; voltage 230 V; Electric fields; Electric potential; Electrodes; Heating; Integrated circuits; Logic gates; Noise measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6466710
