On state output characteristics and transconductance analysis of high voltage (600V) SJ-VDMOS

Author

Long Zhang ; Huilin Yu ; Yifan Wu ; Zhuo Yang ; Jing Zhu

Author_Institution

Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

In this paper, the on state quasi-saturation effect of high voltage SJ-VDMOS (Superjunction vertical double diffused MOSFET) which is formed using alternate process of boron implantation and n-epitaxial growth for several turns are investigated in detail. Transconductance of the device is studied by simply formula derivation of MOSFET. Velocity saturation in the JFET region is strongly influence the transconductance performance of the device. In order to improve the quasi-saturation and have a flatter transconductance, an improved structure having floating p-pillar is proposed without additional process. Eventually, the above results are confirmed by simulation and measurement.

Keywords

boron; epitaxial growth; power MOSFET; JFET region; boron implantation; flatter transconductance; floating p-pillar; high voltage SJ-VDMOS; n-epitaxial growth; quasisaturation improvement; state output characteristics; state quasisaturation effect; superjunction vertical double diffused MOSFET; transconductance analysis; transconductance performance; velocity saturation; voltage 600 V; JFETs; Logic gates; MOS devices; MOSFET circuits; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6466711

Filename

6466711