Title :
Effective radius models of nanoscale elliptical Surrounding-Gate MOSFETs
Author :
Ping Xiang ; Guangxi Hu ; Guanghui Mei ; Ran Liu ; Lingli Wang ; Tingao Tang
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Effective radius models for the nanoscale elliptical Surrounding-Gate (SG) metal-oxide-semiconductor field-effect transistor (MOSFET) are developed. The characteristics of the elliptical SG MOSFET are simulated with TCAD simulation tools, the electric potential, drain to source current, and the subthreshold swing are investigated. The simple effective radius models can be implanted in circuit simulations, and facilitate the practical use of the device.
Keywords :
MOSFET; circuit simulation; electric potential; nanoelectronics; technology CAD (electronics); SG metal-oxide-semiconductor field-effect transistor; TCAD simulation tool; circuit simulation; drain to source current; electric potential; elliptical SG MOSFET; nanoscale elliptical surrounding-gate MOSFET; radius model; subthreshold swing; Electric potential; Integrated circuit modeling; MOSFETs; Mathematical model; Semiconductor process modeling; Simulation;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6466719
