Title :
Time resolved micro-photoluminescence studies of as-grown and surface passivated InP-nanowires grown by low pressure MOVPE
Author :
Reitzenstein, S. ; Crankshaw, S. ; Münch, S. ; Chuang, L.C. ; Moewe, M. ; Böckler, C. ; Forchel, A. ; Chang-Hasnain, C.
Author_Institution :
Univ. Wurzburg, Wurzburg
fDate :
July 29 2007-Aug. 11 2007
Abstract :
We present optical studies of single InP nanowires. The nanowires show small emission linewidths as low as 2.3 meV and a low surface recombination velocity. HF passivation results in a strong increase of PL intensity.
Keywords :
III-V semiconductors; indium compounds; nanowires; passivation; photoluminescence; semiconductor quantum wires; surface recombination; time resolved spectra; HF passivation; InP; emission linewidths; low pressure MOVPE; nanowires; surface passivation; surface recombination velocity; time resolved microphotoluminescence; Chemicals; Epitaxial growth; Epitaxial layers; Hafnium; Indium phosphide; Nanowires; Optical sensors; Passivation; Radiative recombination; Stimulated emission;
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
DOI :
10.1109/INOW.2007.4302942
