Author :
Liu, C.T. ; Lloyd, E.J. ; Yi Ma ; Du, M. ; Opila, R.L. ; Hillenius, S.F.
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
The difficulties in device engineering increase rapidly as advanced circuits take up more portions in the design of low-power IC products. These new circuit designs enforce strict requirements on the deep-submicron FETs, particularly in the areas of: (1) properties of thin gate oxides, (2) control of short channel effects, (3) doping profiles to reduce subthreshold slope and back-gate bias coefficient, and (4) device aging. Previously, we have shown that thin gate oxides grown on nitrogen implanted (N/sup +/ I/I) Si substrates can prevent boron (B) penetration for p-MOSFETs. Here, we have (1) built high performance 0.2 /spl mu/m CMOS with 25 /spl Aring/ gate oxide, (2) used multi-angle ellipsometry, high-resolution TEM, SIMS, XPS, and tunneling current to study the oxide properties, (3) identified N distribution in the oxide, (4) observed quantum effects in the oxide tunneling current, (5) compared hole and electron mobilities with and without N/sup +/ I/I, (6) demonstrated a range of V/sub th/, I/sub on/, and I/sub off/, (7) achieved 72 mV/dec subthreshold slope (SS), 60 mV Vth-shift under 2.5 V back-gate bias, and below 10 mV DIBL V/sub G/-shift, (8) studied junction leakage with and without N/sup +/ I/I, (9) oxide breakdown voltage, and (10) device lifetimes for both n- and p-MOSFETs.
Keywords :
CMOS integrated circuits; MOSFET; X-ray photoelectron spectra; boron; dielectric thin films; doping profiles; electric breakdown; electron mobility; ellipsometry; hole mobility; ion implantation; leakage currents; nitrogen; secondary ion mass spectra; semiconductor-insulator boundaries; silicon; substrates; transmission electron microscopy; tunnelling; 0.2 micron; 2.5 V; 25 A; B penetration prevention; N implanted Si substrates; NMOSFET; PMOSFET; SIMS; Si:B,N; SiO/sub 2/-Si:B,N; XPS; back-gate bias coefficient; deep-submicron FETs; device aging; device lifetimes; electron mobility; high performance CMOS; high-resolution TEM; hole mobility; junction leakage; multi-angle ellipsometry; oxide breakdown voltage; quantum effects; short channel effects; subthreshold slope; thin gate oxide; tunneling current; Aging; Boron; Circuit synthesis; Design engineering; Doping profiles; Ellipsometry; FETs; MOSFET circuits; Nitrogen; Tunneling;