Title :
The design and fabrication of nanostructure on p-type GaN surface for GaN-based LEDs with high light extraction efficiency
Author :
Zhang, Xian-Peng ; Han, Yan-Jun ; Luo, Yi ; Xue, Xiao-Lin ; Huang, Jin
Author_Institution :
Tsinghua Univ., Beijing
fDate :
July 29 2007-Aug. 11 2007
Abstract :
The parameters of nanostructure on p-GaN surface for light extraction efficiency of GaN based LEDs were studied by using Monte-Carlo ray tracing simulation, and nanostructures were fabricated by using interferential exposure and ICP dry etching.
Keywords :
III-V semiconductors; Monte Carlo methods; etching; gallium compounds; light emitting diodes; materials preparation; nanostructured materials; nanotechnology; plasma materials processing; ray tracing; wide band gap semiconductors; GaN; GaN-based LED; Monte-Carlo ray tracing simulation; inductively coupled plasma dry etching; light extraction efficiency; nanostructure; Data mining; Dry etching; Fabrication; Gallium nitride; Laboratories; Light emitting diodes; Ray tracing; Rough surfaces; Substrates; Surface roughness;
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
DOI :
10.1109/INOW.2007.4302948