DocumentCode :
3399097
Title :
Room Temperature Inductively Coupled Plasma Etching of InP-Based Semiconductors Using Cl2/N2 and Cl2/N2/Ar Mixtures
Author :
Zhou, Qiwei ; Sun, Changzheng ; Wang, Jian ; Xiong, Bing ; Luo, Yi
Author_Institution :
Tsinghua Univ., Beijing
fYear :
2007
fDate :
July 29 2007-Aug. 11 2007
Firstpage :
198
Lastpage :
199
Abstract :
Room temperature etching of InP is carried out using Cl2/N2 and Cl2/N2/Ar inductively coupled plasma (ICP). The surface roughness and anisotropy obtained with different etching conditions are presented.
Keywords :
III-V semiconductors; etching; indium compounds; plasma materials processing; silicon; surface roughness; InP:Si; RF power; chamber pressure; flow rate; inductively coupled plasma dry etching technique; semiconductors; silicon-doped (100) InP substrates; surface roughness; temperature 293 K to 298 K; Anisotropic magnetoresistance; Argon; Dry etching; Indium phosphide; Plasma applications; Plasma chemistry; Plasma density; Plasma temperature; Radio frequency; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
Type :
conf
DOI :
10.1109/INOW.2007.4302950
Filename :
4302950
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3399097
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