Title :
A compact model for the STI y-stress effect on deep submicron PDSOI MOSFETs
Author :
Jianhui Bu ; Jinshun Bi ; Xianjun Ma ; Jiajun Luo ; Zhengsheng Han ; Haogang Cai
Author_Institution :
Inst. of Microelectron., Beijing, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
The shallow trench isolation (STI) y-stress effect on deep submicron PDSOI MOSFETs was studied. Instance parameters SAy, SBy and model parameters a1, a2, b1, b2 were proposed to build a compact model for this effect. This model can be easily implemented in the SOI MOSFET compact model like BSIMSOI model. By using this model, we can simulate the STI y-stress effect well, especially for the changes of Idsat and Vtlin.
Keywords :
MOSFET; isolation technology; semiconductor device models; silicon-on-insulator; BSIMSOI model; SAy; SBy; SOI MOSFET compact model; STI; deep submicron PDSOI MOSFET; shallow trench isolation y-stress effect; MOSFETs; Semiconductor device modeling; Semiconductor process modeling; Standards; Stress; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6466735
