Title :
Time-resolved Photoluminescence Characterization of InGaN/GaN Quantum Wells
Author :
Ren, Fan ; Sun, Changzheng ; Han, Yanjun ; Hao, Zhibiao ; Luo, Yi
Author_Institution :
Tsinghua Univ., Beijing
fDate :
July 29 2007-Aug. 11 2007
Abstract :
Steady state and time-resolved photoluminescence (TRPL) of InGaN/GaN quantum well (QW) samples grown by MOCVD is investigated. The carrier competition between QW peak and yellow band can be generally explained by the effect of indium concentration in InGaN/GaN QWs.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum wells; InGaN-GaN; MOCVD; quantum wells; steady state photoluminescence; time-resolved photoluminescence; Charge carrier lifetime; Gallium nitride; Indium; Laboratories; Laser excitation; Light emitting diodes; MOCVD; Photoluminescence; Steady-state; Sun;
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
DOI :
10.1109/INOW.2007.4302968
