• DocumentCode
    3399420
  • Title

    Time-resolved Photoluminescence Characterization of InGaN/GaN Quantum Wells

  • Author

    Ren, Fan ; Sun, Changzheng ; Han, Yanjun ; Hao, Zhibiao ; Luo, Yi

  • Author_Institution
    Tsinghua Univ., Beijing
  • fYear
    2007
  • fDate
    July 29 2007-Aug. 11 2007
  • Firstpage
    234
  • Lastpage
    235
  • Abstract
    Steady state and time-resolved photoluminescence (TRPL) of InGaN/GaN quantum well (QW) samples grown by MOCVD is investigated. The carrier competition between QW peak and yellow band can be generally explained by the effect of indium concentration in InGaN/GaN QWs.
  • Keywords
    III-V semiconductors; MOCVD; gallium compounds; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum wells; InGaN-GaN; MOCVD; quantum wells; steady state photoluminescence; time-resolved photoluminescence; Charge carrier lifetime; Gallium nitride; Indium; Laboratories; Laser excitation; Light emitting diodes; MOCVD; Photoluminescence; Steady-state; Sun;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-1591-5
  • Type

    conf

  • DOI
    10.1109/INOW.2007.4302968
  • Filename
    4302968
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3399420