• DocumentCode
    3399433
  • Title

    Variability in scaled MOSFETs: Measurements, analysis, and suppression

  • Author

    Hiramoto, Toshiro ; Kumar, Ajit ; Mizutani, Tomoko ; Saraya, Takuya

  • Author_Institution
    Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2012
  • fDate
    Oct. 29 2012-Nov. 1 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The recent research activities on random variability in scaled bulk MOSFETs are described. Using a special test-element-group (TEG), threshold voltage (VTH) variability of as many as 10 billion transistors have been measured for the first time. For the suppression of variability, a novel self-suppression method of random variability in SRAM cells is proposed and demonstrated.
  • Keywords
    MOSFET; SRAM chips; semiconductor device testing; SRAM cell; TEG; random variability; scaled bulk MOSFET; self-suppression method; test-element-group; threshold voltage; transistor; variability suppression; Logic gates; SRAM cells; Semiconductor device measurement; Stress; Transistors; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4673-2474-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2012.6466742
  • Filename
    6466742
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3399433