DocumentCode :
3399436
Title :
Red Emitting, High-Performance AlGaInAs Quantum Dot Lasers
Author :
Schlereth, T.W. ; Schneider, C. ; Gerhard, S. ; Kaiser, W. ; Höfling, S. ; Forchel, A.
Author_Institution :
Univ. Wurzburg, Wurzburg
fYear :
2007
fDate :
July 29 2007-Aug. 11 2007
Firstpage :
236
Lastpage :
237
Abstract :
We fabricated red emitting (763.7 nm) Al0.13Ga0.40ln0.47As quantum dot (QD) distributed feedback (DFB) lasers. The devices exhibit output powers >20 mW, threshold currents as low as 34 mA and side mode suppression ratios of 40 dB.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; quantum dot lasers; visible spectra; AlGaInAs; DFB laser diodes; current 34 mA; distributed feedback lasers; emission wavelength; oxygen absorption spectroscopy; red emitting quantum dot lasers; side mode suppression ratios; threshold currents; wavelength 763.7 nm; Diode lasers; Distributed feedback devices; Laser feedback; Laser modes; Power generation; Quantum dot lasers; Quantum well lasers; Scanning electron microscopy; Temperature; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
Type :
conf
DOI :
10.1109/INOW.2007.4302969
Filename :
4302969
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3399436
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