DocumentCode :
3399806
Title :
Effect of Ar / O2 gas flow ratio on photocatalytic efficiency of TiO2 films prepared by DC magnetron sputtering
Author :
Lin, Zhao ; Liping Lv ; Qiu, Jiawen
Author_Institution :
Lanzhou Jiaotong Univ., Lanzhou
fYear :
2007
fDate :
July 29 2007-Aug. 11 2007
Firstpage :
272
Lastpage :
273
Abstract :
Nanometer polycrystalline anatase TiO2 films were prepared by DC magnetron sputtering after annealing. Photocatalytic experiment reveals that the sample deposited under lower Ar/O2 gas flow ratio shows better degradation activity.
Keywords :
annealing; catalysis; photochemistry; semiconductor thin films; sputter deposition; titanium compounds; DC magnetron sputtering; TiO2; annealing; degradation activity; gas flow ratio; nanometer polycrystalline anatase films; photocatalytic efficiency; titanium dioxide films; Annealing; Argon; Cleaning; Fluid flow; Laboratories; Sputtering; Temperature; Titanium; Transistors; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
Type :
conf
DOI :
10.1109/INOW.2007.4302987
Filename :
4302987
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3399806
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