Title :
Scaling issues and Ge profile optimization in advanced UHV/CVD SiGe HBTs
Author :
Richey, David M. ; Cressler, John D.
Author_Institution :
Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA
fDate :
29 Sep-1 Oct 1996
Abstract :
The SiGe heterostructure device simulation tool SCORPIO is used to investigate profile optimization in SiGe HBTs for high-performance analog circuit applications. After calibrating SCORPIO to measured data, the effects of germanium profile shape on current gain, cut-off frequency, Early voltage, and maximum oscillation frequency are compared over the temperature range of 200-360 K. The effects of aggressive base profile scaling on device performance are also investigated as a function of SiGe film stability
Keywords :
Ge-Si alloys; chemical vapour deposition; digital simulation; doping profiles; heterojunction bipolar transistors; semiconductor device models; semiconductor doping; semiconductor growth; semiconductor materials; 200 to 360 K; CVD; Early voltage; HBTs; SCORPIO; SiGe; UHV; base profile scaling; current gain; cut-off frequency; device simulation tool; film stability; high-performance analog circuit applications; maximum oscillation frequency; profile optimization; profile shape; scaling issues; Analog circuits; Circuit simulation; Current measurement; Cutoff frequency; Frequency measurement; Gain measurement; Germanium silicon alloys; Performance gain; Shape measurement; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3516-3
DOI :
10.1109/BIPOL.1996.553890
