A temperature dependent SPICE macro-model for power MOSFETs

Author

Pierce, Donald G.

Author_Institution

Sandia Nat. Lab., Albuquerque, NM, USA

fYear

1991

fDate

14-17 May 1991

Firstpage

597

Abstract

A power MOSFET SPICE macro-model suitable for use over the temperature range -55 to 125°C has been developed. The model is composed of a single parameter set with temperature dependence accessed through the SPICE.TEMP card. SPICE parameter extraction techniques for the model and model predictive accuracy are discussed. Though complex, the model and approach to parameter extraction are straightforward. As all the parameter extraction algorithms are analytic in nature, automation of the extraction process is straightforward and requires no special optimization routines. The addition of a power MOSFET model to the SPICE code would result in more robust and efficient simulations

Keywords

SPICE; equivalent circuits; insulated gate field effect transistors; power transistors; semiconductor device models; -55 to 125 degC; AC parameters; DC parameters; SPICE macro-model; model predictive accuracy; parameter extraction; power MOSFET model; temperature dependence; Accuracy; Algorithm design and analysis; Automation; MOSFETs; Parameter extraction; Predictive models; Robustness; SPICE; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1991., Proceedings of the 34th Midwest Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-0620-1

Type

conf

DOI

10.1109/MWSCAS.1991.252091

Filename

252091