Title :
Advancement of MOSFET with the application of hafnium
Author :
Devrani, Vijeta ; Srivastava, Viranjay M.
Author_Institution :
Dept. of ECE, Jaypee Univ. of Inf. Technol., Solan, India
Abstract :
In this paper, we have discussed the use of hafnium and its oxide in the designing of a MOSFET in place of silicon and its oxide. The performance of HfO2 for the MOSFET such as oxide capacitance per unit area, threshold voltage, mobility of carriers, drain current, body biasing effect, resistance, capacitance, figure of merit, CMOS switching characteristics with the rise time, fall time, maximum signal frequency, propagation delay and power dissipation have been discussed.
Keywords :
CMOS integrated circuits; MOSFET; carrier mobility; hafnium compounds; CMOS switching characteristics; HfO2; MOSFET; body biasing effect; carrier mobility; drain current; fall time; figure of merit; hafnium; maximum signal frequency; oxide capacitance per unit area; power dissipation; propagation delay; resistance; rise time; threshold voltage; Capacitance; Dielectrics; Hafnium compounds; Logic gates; MOSFET circuits; Threshold voltage; CMOS; Hafnium-dioxide; High Dielectric; MOSFET Parameters; VLSI;
Conference_Titel :
Computer Communication and Informatics (ICCCI), 2012 International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4577-1580-8
DOI :
10.1109/ICCCI.2012.6158903
