• DocumentCode
    3400687
  • Title

    The relevance of fT and fmax for the speed of a bipolar CE amplifier stage

  • Author

    Hurkx, G.A.M.

  • Author_Institution
    Philips Res. Lab., Eindhoven, Netherlands
  • fYear
    1996
  • fDate
    29 Sep-1 Oct 1996
  • Firstpage
    53
  • Lastpage
    56
  • Abstract
    Generalized expressions for the speed of a CE amplifier stage and a CML gate are derived. They are valid for an arbitrary division of R b and Cbc into internal and external components, and presented in terms of directly measurable transistor parameters (f T, fmax and fv) instead of the conventional sum of RC products. It is shown that the transistor input bandwidth fv is an important figure of merit, whereas the maximum oscillation frequency fmax is only of minor importance for high-speed low-power applications
  • Keywords
    amplifiers; bipolar analogue integrated circuits; CML gate; bipolar CE amplifier stage; cut-off frequency; figure of merit; high-speed low-power device; input bandwidth; maximum oscillation frequency; transistor parameters; Bandwidth; Capacitance; Circuits; Delay effects; Differential amplifiers; Electrical resistance measurement; Frequency; Genetic expression; Laboratories; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-3516-3
  • Type

    conf

  • DOI
    10.1109/BIPOL.1996.553935
  • Filename
    553935
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3400687