Effect of microwave treatment on the properties of Au-TiBx-Al-Ti-n-GaN ohmic contacts

Author

Belyaev, A.E. ; Boltovets, N.S. ; Ivanov, V.N. ; Konakova, R.V. ; Kolyadina, E.Yu. ; Kudryk, Ya.Ya. ; Matveeva, L.A. ; Milenin, V.V. ; Sheremet, V.M.

Author_Institution

V. Lashkaryov Inst. of Semicond. Phys., NAS of Ukraine, Kiev

fYear

2008

fDate

8-12 Sept. 2008

Firstpage

550

Lastpage

551

Abstract

We studied the effect of microwave irradiation (frequency of 2.45 GHz, irradiance of ~1.5 W/cm²) for 2-100 s on the characteristics of Au-TiB_x-Al-Ti-n-GaN contact structures. A correlation between the contact resistivity changes and wafer curvature was found. This indicates considerable effect of intrinsic stresses on contact resistivity. Relative spread of ohmic contact resistance values decreases with irradiation time. This may indicate local intrinsic stresses homogenization enhanced by microwave irradiation.

Keywords

III-V semiconductors; aluminium; contact resistance; gallium compounds; gold; ohmic contacts; radiation effects; semiconductor-metal boundaries; titanium; titanium compounds; wide band gap semiconductors; Au-TiB_x-Al-Ti-GaN; contact resistivity; frequency 2.45 GHz; intrinsic stresses; irradiation time; microwave irradiation; microwave treatment; ohmic contacts; wafer curvature; Artificial intelligence; Conductivity; Electrical resistance measurement; Electronic mail; Gallium nitride; Gold; Helium; Microwave measurements; Time measurement; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference

Conference_Location

Sevastopol, Crimea

Print_ISBN

978-966-335-166-7

Electronic_ISBN

978-966-335-169-8

Type

conf

DOI

10.1109/CRMICO.2008.4676498

Filename

4676498