DocumentCode :
3401247
Title :
Individual reliability prediction of heterostructure RTD and devices based upon IT
Author :
Gudkov, A.G. ; Leushin, V.Yu. ; Ivanov, Yu.A. ; Meshkov, S.A. ; Khnykina, S.V.
Author_Institution :
Hyperion Ltd., Moscow
fYear :
2008
fDate :
8-12 Sept. 2008
Firstpage :
558
Lastpage :
559
Abstract :
Individual reliability prediction of heterostructure resonant tunneling diode (RTD) is considered; its heterostructure degradation is considered as the dominating factor that has effect on RTDpsilas output electrical characteristic and devices on its basis; the procedure of individual reliability prediction of heterostructure RTD and devices on its basis is offered.
Keywords :
reliability; resonant tunnelling diodes; RTD; heterostructure degradation; heterostructure resonant tunneling diode; individual reliability prediction; output electrical characteristic; Electric variables; Electromagnetic heating; Gallium arsenide; Resistance heating;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
Type :
conf
DOI :
10.1109/CRMICO.2008.4676502
Filename :
4676502
Link To Document :
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