Title :
Study of the improvement of the AuGeNi ohmic contacts to n-GaAs
Author :
Erofeev, E.V. ; Kagadei, V.A.
Author_Institution :
Res. & Production Co. Micran, Tomsk
Abstract :
The results of the comparative analysis of the AuGeNi ohmic contacts parameters received by the different methods of deposition are presented, the opportunity of improvement of the contactspsila parameters by introduction diffusion barrier in the structure of metallization is shown, and also influence of sulphidic treatment of GaAs surface on characteristics of the ohmic contacts is studied.
Keywords :
III-V semiconductors; diffusion barriers; gallium arsenide; germanium alloys; gold alloys; metallisation; nickel alloys; ohmic contacts; semiconductor-metal boundaries; surface treatment; AuGeNi-GaAs; diffusion barrier; metallization structure; n-GaAs; ohmic contacts; surface sulphidic treatment; Annealing; Gallium arsenide; Gold; MESFETs; Metallization; Microscopy; Microwave technology; Ohmic contacts; Tellurium; Titanium alloys;
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
DOI :
10.1109/CRMICO.2008.4676504
