DocumentCode
3401332
Title
The connection between structure of control gate and operation reliability of silicon MOS-transistor
Author
Kulinich, O.A. ; Smyntyna, V.A. ; Yatsunskiy, I.R. ; Glauberman, M.A. ; Chemeresyuk, G.G.
Author_Institution
Odessa Nat. I.I. Mechnikov Univ., Odessa
fYear
2008
fDate
8-12 Sept. 2008
Firstpage
569
Lastpage
570
Abstract
Mechanisms of failure processes with silicon field MOS devices connected with activation of impurity in the gate area were studied. It is shown that failures arise not only by intermetallic phase in dioxide silicon but also at burning out of the gate areas of MOS devices occurring owing to electromigration and activation of atoms of metal in dioxide volume.
Keywords
MOSFET; elemental semiconductors; silicon; Si; electromigration; intermetallic phase; operation reliability; silicon MOS-transistor; Computed tomography; Helium; IEEE catalog; Indium tin oxide; Microwave technology; Organizing; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
978-966-335-166-7
Electronic_ISBN
978-966-335-169-8
Type
conf
DOI
10.1109/CRMICO.2008.4676507
Filename
4676507
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