Title :
The connection between structure of control gate and operation reliability of silicon MOS-transistor
Author :
Kulinich, O.A. ; Smyntyna, V.A. ; Yatsunskiy, I.R. ; Glauberman, M.A. ; Chemeresyuk, G.G.
Author_Institution :
Odessa Nat. I.I. Mechnikov Univ., Odessa
Abstract :
Mechanisms of failure processes with silicon field MOS devices connected with activation of impurity in the gate area were studied. It is shown that failures arise not only by intermetallic phase in dioxide silicon but also at burning out of the gate areas of MOS devices occurring owing to electromigration and activation of atoms of metal in dioxide volume.
Keywords :
MOSFET; elemental semiconductors; silicon; Si; electromigration; intermetallic phase; operation reliability; silicon MOS-transistor; Computed tomography; Helium; IEEE catalog; Indium tin oxide; Microwave technology; Organizing; Silicon;
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
DOI :
10.1109/CRMICO.2008.4676507
