Dual-band GaAs FET power amplifier with two-frequency matching circuits

Author

Uchida, Koji ; Takayama, Yoichiro ; Fujita, Takayuki ; Maenaka, Kazusuke

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Hyogo Univ., Japan

Volume

1

fYear

2005

fDate

4-7 Dec. 2005

Abstract

A dual-band GaAs FET power amplifier with the two-frequency lumped-element matching circuits is designed using the low-pass Chebyshev-form impedance transformer design method. An 800/1500MHz 1Watt-class GaAs FET amplifier is fabricated and the experimental results show the saturated output powers of 30.9dBm and 28.2dBm with the power added-efficiencies of 51.6% and 51.9% at 800MHz and 1500MHz, respectively. The fabricated circuit size is 24mm by 28mm. The presented design approach enables a simple dual-band power amplifier with superior performance and small size.

Keywords

Chebyshev filters; III-V semiconductors; UHF field effect transistors; UHF power amplifiers; gallium arsenide; impedance convertors; low-pass filters; power field effect transistors; 1 W; 1500 MHz; 24 mm; 28 mm; 800 MHz; Chebyshev impedance transformer design method; GaAs; GaAs FET power amplifier; dual-band power amplifer; lumped-element matching circuits; power added efficiencies; saturated output powers; two-frequency matching circuits; Chebyshev approximation; Circuit faults; Design methodology; Dual band; FETs; Frequency; Gallium arsenide; Impedance; Mobile communication; Power amplifiers; Chebyshev impedance transformer; Dual-band power amplifier; GaAs power FET; Lumped-elements;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1606222

Filename

1606222