DocumentCode
3401455
Title
AlInGaN/GaN heterostructures with 2D electron gas and quantum wells for transistors and light emitting diodes
Author
Yablonskii, G.P. ; Lutsenko, E.V. ; Kalish, H. ; Heuken, M.
Author_Institution
Inst. of Phys. of NAS of Belarus, Minsk
fYear
2008
fDate
8-12 Sept. 2008
Firstpage
584
Lastpage
585
Abstract
AlInGaN/GaN heterostructures with 2D electron gas and quantum wells were grown on Si substrates. Optical and electrical properties of the heterostructure were investigated; high electron mobility transistors (HEMT) and light emitting diodes (LED) were fabricated.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; light emitting diodes; semiconductor quantum wells; two-dimensional electron gas; 2D electron gas; AlInGaN-GaN; electrical properties; high electron mobility transistors; light emitting diodes; optical properties; quantum wells; Electron emission; Epitaxial growth; Epitaxial layers; Gallium nitride; HEMTs; Helium; Light emitting diodes; Microwave technology; Photoluminescence; Reflection;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
978-966-335-166-7
Electronic_ISBN
978-966-335-169-8
Type
conf
DOI
10.1109/CRMICO.2008.4676513
Filename
4676513
Link To Document