Title :
Quantum cascade lasers based on superlattice active regions and n-i-p-i doping
Author :
Faist, Jérôme ; Muller, Antoine ; Beck, Mattias
Author_Institution :
Dept. of Phys., Neuchatel Univ., Switzerland
Abstract :
We demonstrate a quantum cascade laser with a novel injection concept. Periodically altered layers of silicon and beryllium doping planes are used to control the internal electric field of the active region. An example is shown using an active region based on a periodic superlattice
Keywords :
quantum well lasers; semiconductor doping; semiconductor superlattices; Be; Si; active region; beryllium doping planes; injection concept; internal electric field; n-i-p-i doping; periodic superlattice; periodically altered layers; quantum cascade lasers; silicon doping planes; superlattice active regions; Doping; III-V semiconductor materials; Laser transitions; Optical materials; Physics; Quantum cascade lasers; Semiconductor lasers; Superlattices; Temperature; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773623
