Title :
Single step growth of buried InP layer using selective rapid thermal MOCVD
Author :
Kreinin, O. ; Bahir, G.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
Rapid thermal MOCVD process has been used to study the selective growth of InP on (001) InP substrate using an ion implanted mask-less definition for the selective epitaxy. The selectivity of InP growth on the un-implanted area is controlled by the TMIn partial pressure and can reach complete growth inhibition on the implanted area. We used the combined nature of the rapid thermal MOCVD system to demonstrate two additional steps: (a) in situ annealing of the ion implanted damaged area and (b) re-growth of Fe:InP layers on the primary “masked surface”, to produce a buried layer in a single growth sequence. High lateral resolution and high quality un-doped and Fe doped semi-insulated InP layers are demonstrated
Keywords :
III-V semiconductors; MOCVD; buried layers; indium compounds; ion implantation; iron; rapid thermal annealing; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; (001) substrate; Fe doped layers; InP; InP:Fe; buried layer; high lateral resolution; high quality layers; in situ annealing; ion implanted damaged area; ion implanted mask-less definition; layer re-growth; partial pressure dependence; selective epitaxy; selective growth; selective rapid thermal MOCVD; single growth sequence; single step growth; undoped layers; Epitaxial growth; Indium phosphide; Iron; Lamps; Lithography; MOCVD; Optical surface waves; Rapid thermal annealing; Rapid thermal processing; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773634
