Title :
Implantation optimization for 1.55 μm VCSEL
Author :
Boucart, J. ; Derouin, E. ; Bouché, N. ; Starck, C. ; Plais, A. ; Gaborit, F. ; Goldstein, L. ; Escalére, C. ; Jacquet, J.
Author_Institution :
OPTO+, Alcatel Corp. Res. Center, Marcoussis, France
Abstract :
We present the results about the implantation step on the realization of long wavelength VCSELs emitting at 1.55 μm. The basic structure is based on a bottom n-doped InP-InGaAsP DBR and a top n-doped GaAs/AlAs metamorphic DBR. The current injection is done through a reverse biased tunnel junction and the current is localized through an implantation step. In this paper we present the influence of the implantation energies and the type of ions (H+ or O+ ) on the laser performance
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; ion implantation; laser transitions; optimisation; semiconductor doping; semiconductor lasers; surface emitting lasers; 1.55 μm VCSEL; 1.55 mum; GaAs/AlAs metamorphic DBR; InP-InGaAsP; InP/InGaAsP DBR; basic structure; bottom n-doped; current injection; implantation energies; implantation optimization; implantation step; laser performance; long wavelength VCSELs; reverse biased tunnel junction; top n-doped; Conductivity; Distributed Bragg reflectors; Gallium arsenide; Gold; Indium phosphide; Mirrors; Scanning electron microscopy; Threshold current; Vertical cavity surface emitting lasers; Visualization;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773641
