Implantation optimization for 1.55 μm VCSEL

Author

Boucart, J. ; Derouin, E. ; Bouché, N. ; Starck, C. ; Plais, A. ; Gaborit, F. ; Goldstein, L. ; Escalére, C. ; Jacquet, J.

Author_Institution

OPTO+, Alcatel Corp. Res. Center, Marcoussis, France

fYear

1999

fDate

1999

Firstpage

87

Lastpage

90

Abstract

We present the results about the implantation step on the realization of long wavelength VCSELs emitting at 1.55 μm. The basic structure is based on a bottom n-doped InP-InGaAsP DBR and a top n-doped GaAs/AlAs metamorphic DBR. The current injection is done through a reverse biased tunnel junction and the current is localized through an implantation step. In this paper we present the influence of the implantation energies and the type of ions (H⁺ or O⁺) on the laser performance

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; ion implantation; laser transitions; optimisation; semiconductor doping; semiconductor lasers; surface emitting lasers; 1.55 μm VCSEL; 1.55 mum; GaAs/AlAs metamorphic DBR; InP-InGaAsP; InP/InGaAsP DBR; basic structure; bottom n-doped; current injection; implantation energies; implantation optimization; implantation step; laser performance; long wavelength VCSELs; reverse biased tunnel junction; top n-doped; Conductivity; Distributed Bragg reflectors; Gallium arsenide; Gold; Indium phosphide; Mirrors; Scanning electron microscopy; Threshold current; Vertical cavity surface emitting lasers; Visualization;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773641

Filename

773641