Title :
Composite-channel InP HEMT for W-band power amplifiers
Author :
Chen, Y.C. ; Chin, P. ; Ingram, D. ; Lai, R. ; Grundbacher, R. ; Barsky, M. ; Block, T. ; Wojtowicz, M. ; Tran, L. ; Medvedev, V. ; Yen, H.C. ; Streit, D.C. ; Brown, A.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
We have developed composite-channel InP-InGaAs HEMTs for W-band high power amplifier applications. The optimized 0.15 μm T-gate device demonstrated state-of-the-art gm-Imax combination. It also showed a 1.5 V improvement in on-state and off-state breakdown over the conventional InP HEMT without degrading the RF performance. A two-stage MMIC power amplifier built on this device delivered 25 dBm output power with 17 dB linear gain at 94 GHz as measured on wafer. To our knowledge, this is the first demonstration of composite-channel HEMT at 94 GHz with excellent power performance
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave power amplifiers; 0.15 micron; 17 dB; 94 GHz; InP-InGaAs; W-band power amplifiers; composite-channel HEMT; high power amplifier applications; linear gain; off-state breakdown; output power; two-stage MMIC power amplifier; Degradation; Electric breakdown; HEMTs; High power amplifiers; Indium phosphide; MMICs; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773695
