1.3-μm AlGaInAs/InP ridge-waveguide lasers with integrated beam-expanders

Author

Takemasa, K. ; Wada, H. ; Munakata, T. ; Kamijoh, T.

Author_Institution

Opto-Electron. Labs., Oki Electr. Ind. Co. Ltd., Tokyo, Japan

fYear

1999

fDate

1999

Firstpage

393

Lastpage

396

Abstract

AlGaInAs lasers with integrated beam-expanders (IBEs) have been fabricated for the first time. The thickness of the multiple-quantum-well (MQW) active layers was vertically tapered by using selective area growth (SAG). A maximum operating temperature has reached 145°C. The beam divergence in the vertical direction was drastically reduced from 41.7° (without IBEs) to 18.0° (with IBEs)

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser accessories; laser beams; quantum well lasers; ridge waveguides; waveguide lasers; 1.3 micron; 145 C; AlGaInAs-InP; AlGaInAs/InP ridge waveguide laser; beam divergence; device fabrication; integrated beam expander; multiple quantum well active layer; operating temperature; selective area growth; vertical tapering; Fiber lasers; Identity-based encryption; Indium phosphide; Laser beams; Laser modes; Optical coupling; Optical device fabrication; Quantum well devices; Temperature; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773716

Filename

773716