Title :
Novel MOBILE gates with low-power, relaxed parameter sensitivity, and increased driving capability
Author :
Prost, W. ; Auer, U. ; Brennemann, A. ; Tegude, F.-J.
Author_Institution :
Dept. of Solid-State Electron., Gerhard-Mercator-Univ., Duisburg
Abstract :
Negative-differential resistance devices, i.e. Resonant Tunneling Diodes (RTD) have recently enabled a substantial improvement in low-power memories and high-speed logic gates. For logic circuits two series connected RTDs are monolithically integrated with parallel HFET input branches building the monostable-bistable transition logic element (MOBILE). In this paper we report on drastic improvements of the MOBILE concept addressing the major restrictions: trade-off between output driving capability, number of inputs and additional current for the parallel input branches, critical design criteria for two independent technologies: HFET (threshold voltage, lateral current density) and RTD (device area, vertical current density)
Keywords :
current density; high-speed integrated circuits; integrated logic circuits; logic design; logic gates; low-power electronics; monolithic integrated circuits; resonant tunnelling diodes; MOBILE gates; critical design criteria; device area; high-speed logic gates; lateral current density; logic circuits; monostable-bistable transition logic element; negative-differential resistance devices; output driving capability; parallel HFET input branches; resonant tunneling diodes; series connected RTDs; threshold voltage; vertical current density; Buildings; Current density; Diodes; HEMTs; Logic circuits; Logic devices; Logic gates; MODFETs; Resonant tunneling devices; Threshold voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773720
