DocumentCode
340162
Title
50 to 70 GHz InP/InGaAs HBT amplifier with 20 dB gain
Author
Morf, Thomas ; Huber, Dieter ; Huber, Alex ; Schwarz, Volker ; Jäckel, Heinz
Author_Institution
Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
fYear
1999
fDate
1999
Firstpage
431
Lastpage
434
Abstract
In this paper the design and a complete characterization of an InP/InGaAs single heterojunction bipolar (SHBT) mm-wave amplifier is described. The circuit is designed for the 60 GHz band allocated for wireless LAN and mobile communications. The amplifier achieves a gain of 20 dB from 50 GHz to 70 GHz. Beside S-parameter noise and gain compression measurements are presented. No comparable HBT amplifier at 60 GHz could be found in literature
Keywords
III-V semiconductors; S-parameters; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave amplifiers; semiconductor device noise; 20 dB; 50 to 70 GHz; InP; InP/InGaAs SHBT MM-wave amplifier; S-parameter noise; gain compression; single heterojunction bipolar transistor; Circuits; Frequency; Gain; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; MIM capacitors; Optical amplifiers; Resistors; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location
Davos
ISSN
1092-8669
Print_ISBN
0-7803-5562-8
Type
conf
DOI
10.1109/ICIPRM.1999.773725
Filename
773725
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