Title :
50 to 70 GHz InP/InGaAs HBT amplifier with 20 dB gain
Author :
Morf, Thomas ; Huber, Dieter ; Huber, Alex ; Schwarz, Volker ; Jäckel, Heinz
Author_Institution :
Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
In this paper the design and a complete characterization of an InP/InGaAs single heterojunction bipolar (SHBT) mm-wave amplifier is described. The circuit is designed for the 60 GHz band allocated for wireless LAN and mobile communications. The amplifier achieves a gain of 20 dB from 50 GHz to 70 GHz. Beside S-parameter noise and gain compression measurements are presented. No comparable HBT amplifier at 60 GHz could be found in literature
Keywords :
III-V semiconductors; S-parameters; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave amplifiers; semiconductor device noise; 20 dB; 50 to 70 GHz; InP; InP/InGaAs SHBT MM-wave amplifier; S-parameter noise; gain compression; single heterojunction bipolar transistor; Circuits; Frequency; Gain; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; MIM capacitors; Optical amplifiers; Resistors; Scattering parameters;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773725
