High switching rate capability of mm-wave InGaAs PIN diodes

Author

Alekseev, Egor ; Pavlidis, Dimitris

Author_Institution

Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA

fYear

1999

fDate

1999

Firstpage

443

Lastpage

446

Abstract

The switching-rate capability of mm-wave InGaAs PIN diodes of various sizes was evaluated for the first time by measuring their response times under various bias conditions. The dependencies of InGaAs PIN diode switching times are discussed, and the results are correlated with their DC characteristics. InGaAs PIN diodes demonstrated short switching times (fall time τ_F=250 ps and rise time τ _R=130 ps). Switching in large diodes was limited by bulk time constants, while faster switching in small diodes was due to increased surface effects. Switching of InGaAs PIN diodes at a high rate of 5Gbps was observed

Keywords

III-V semiconductors; gallium arsenide; indium compounds; millimetre wave diodes; p-i-n diodes; semiconductor switches; DC characteristics; InGaAs; MM-wave InGaAs PIN diodes; bias conditions; bulk time constants; high switching rate capability; response times; surface effects; switching times; Consumer electronics; Delay; Diodes; Indium gallium arsenide; Indium phosphide; Radar; Signal generators; Switches; Testing; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773728

Filename

773728