Title :
High switching rate capability of mm-wave InGaAs PIN diodes
Author :
Alekseev, Egor ; Pavlidis, Dimitris
Author_Institution :
Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The switching-rate capability of mm-wave InGaAs PIN diodes of various sizes was evaluated for the first time by measuring their response times under various bias conditions. The dependencies of InGaAs PIN diode switching times are discussed, and the results are correlated with their DC characteristics. InGaAs PIN diodes demonstrated short switching times (fall time τF=250 ps and rise time τ R=130 ps). Switching in large diodes was limited by bulk time constants, while faster switching in small diodes was due to increased surface effects. Switching of InGaAs PIN diodes at a high rate of 5Gbps was observed
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; millimetre wave diodes; p-i-n diodes; semiconductor switches; DC characteristics; InGaAs; MM-wave InGaAs PIN diodes; bias conditions; bulk time constants; high switching rate capability; response times; surface effects; switching times; Consumer electronics; Delay; Diodes; Indium gallium arsenide; Indium phosphide; Radar; Signal generators; Switches; Testing; Time measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773728
