Title :
Advanced non-linear InP HEMT model parameter estimation from vectorial large-signal measurements
Author :
Schreurs, D. ; Verspecht, J. ; Vandenberghe, S. ; van der Zanden, K. ; Carchon, G. ; Nauwelaers, B.
Author_Institution :
ESAT, Katholieke Univ., Leuven, Heverlee, Belgium
Abstract :
The standard non-linear InP HEMT model parameter estimation procedure is often cumbersome as several measurement systems are involved. We show that the model generation complexity can be reduced tremendously by only using full two-port vectorial large-signal measurements. We will evaluate the results of applying this new technique to both empirical and neural network models
Keywords :
III-V semiconductors; computational complexity; high electron mobility transistors; indium compounds; neural nets; parameter estimation; semiconductor device models; InP; advanced nonlinear InP HEMT model parameter estimation; empirical models; full two-port vectorial large-signal measurements; neural network models; vectorial large-signal measurements; Etching; Gold; HEMTs; Indium phosphide; Isolation technology; MMICs; Metallization; Neural networks; Parameter estimation; Scattering parameters;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773732
