• DocumentCode
    3401655
  • Title

    Nanotechnology of CoSi2 epitaxial film formation on monocryctalline silicon

  • Author

    Makogon, Yu.N. ; Pavlova, Elmira P. ; Sidorenko, SI I. ; Beddies, G.

  • Author_Institution
    Nat. Tech. Univ. of Ukraine, Kiev
  • fYear
    2008
  • fDate
    8-12 Sept. 2008
  • Firstpage
    610
  • Lastpage
    611
  • Abstract
    The research is devoted to the decision material science and technological task of improvement of the structural quality of active region in which ultrahigh frequency (UHF) oscillations are generated directly. It is shown the possibility of formation epitaxial CoSi2 film on monocrystalline Si (001) using the diffusion-controlling Ti and SiO2 layers between the Co film and Si substrate.
  • Keywords
    cobalt compounds; diffusion; epitaxial growth; nanotechnology; CoSi2; Si; diffusion-controlling layers; epitaxial film formation; monocrystalline silicon; nanotechnology; ultrahigh frequency oscillations; Chemical technology; Gallium arsenide; Helium; Nanotechnology; Physics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-966-335-166-7
  • Electronic_ISBN
    978-966-335-169-8
  • Type

    conf

  • DOI
    10.1109/CRMICO.2008.4676525
  • Filename
    4676525
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3401655