Title :
Influence of deep levels in AlInAs/GalnAs/InP HFETs
Author :
Souifi, A. ; Georgescu, B. ; Bremond, G. ; Py, M.A. ; Décobert, J. ; Post, G. ; Guillot, G.
Author_Institution :
INSA, CNRS, Villeurbanne, France
Abstract :
The aim of this work is to show how some parasitic phenomena such as kink effect or low frequency noise often observed in the characteristics of AlInAs/GaInAs/InP composite channel HFETs can be correlated with deep levels. HFETs have been characterized using deep level transient spectroscopy (DLTS), current transient spectroscopy (CTS), drain lag (DL), and low frequency noise (LFN) measurements. Output characteristics of the devices have also been recorded under monochromatic optical excitation in order to study the optical properties of the defects. The main trap is related to the AlInAs layers and identified as E3. It is shown that E3 is responsible for a strong generation-recombination noise at room temperature. This trap also contributes to a strong output conductance variation
Keywords :
III-V semiconductors; aluminium compounds; deep level transient spectroscopy; deep levels; defect states; electron traps; field effect transistors; gallium arsenide; hole traps; indium compounds; semiconductor device noise; AlInAs-GaInAs-InP; AlInAs/GalnAs/InP HFETs; DLTS; E3 trap; composite channel HFETs; current transient spectroscopy; deep level transient spectroscopy; deep levels; defects; drain lag; generation-recombination noise; kink effect; low frequency noise; monochromatic optical excitation; optical properties; output characteristics; output conductance variation; parasitic phenomena; room temperature; Current measurement; Frequency measurement; HEMTs; Indium phosphide; Low-frequency noise; MODFETs; Optical devices; Optical noise; Optical recording; Spectroscopy;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773739
